features metal-semiconductor junction with gard ring epitaxial construction low forward voltage drop high current capability the plastic material carries ul recognition 94v-0 for use in low vlotage, high frequency inverters, mechanical data case molded plastic polarity:color band denotes cathode weight: 0.003 ounces,0.093 grams dimensions in inches and (millimeters) maximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave ,60hz, resistive or inductive load. for capacitive load, derate current by 20% characteristics symbol ss52b ss53b SS54B ss55b ss56b ss58b ss510b unit maximum recurrent peak reverse voltage v rrm 20 30 40 50 60 80 100 v maximum rms voltage v rms 14 21 28 35 42 56 70 v maximum dc blocking voltage v dc 20 30 40 50 60 80 100 v maximum average forward rectified current 0.375 9.5mm) lead lengths @t l =95 peak forward surage current 8.3ms single half sine-wave super imposed on rated load(jedec method) maximum forward voltage at 5.0a dc v f 0.45 0.55 0.6 v maximum dc reverse current @t j =25 at rated dc bolcking voltage @tj=100 typical junction capacitance (note1) c j pf typical thermal resistance (note2) r ja /w operating temperature range t j storage temperature range t stg ~ 173 ~ a a ma notes: 1.measured at 1.0 mhz and applied reverse voltage of 4.0v dc 0.7 500 i r surface mount schottky barrier rectifiers 2.thermal resistance junction to ambient, -55 to +150 -55 to +150 50 ss52b thru ss510b reverse voltage - 20 to 100 volts forward current - 5.0 amperes 350 10 0.85 free wheeling, and polarity protection applications 15 i (av) i fsm 5.0 150 1.0 .030(0.76) .060(1.52) .096(2.44) .084(2.13) .200(5.08) .220(5.59) .008(.203) .002(.051) .006(.152) .012(.305) .160(4.06) .185(4.70) .130(3.30) .155(3.94) .083(2.11) .075(1.91) smb
rating and charactertic curves ss52b thru ss510b ~ 174 ~ pulse width 8.3ms single half-sine-wave (jedec method) fig. 2 C maximum non-repetitive surge current number of cycles at 60hz p e a k f o r w a r d s u r g e c u r r e n t , ( a m p e r e s 200 150 100 50 0 100 50 20 10 1 2 5 fig. 1 C forward current derating curve lead temperature ( ) a v e r a g e f o r w a r d c u r r e n t a m p e r e s 2.0 0 25 4.0 6.0 50 75 100 125 150 175 1.0 3.0 5.0 single phase half wave 60hz resistive or inductive load 0.375 9.5mm) lead lengths i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) fig.4-typical forward characteristics instantaneous forward voltage, volts 1.0 0.1 10 0.1 0.2 0.5 0.3 0.6 0.9 0.4 0.7 0.8 100 1.0 ss52b ss55b-ss56b ss53b SS54B ss58b- t j = 25 c c a p a c i t a n c e , ( p f ) fig.3 C typical junction capacitance reverse voltage ,volts 0.1 4000 1000 100 1 10 100 ss52b -SS54B ss55b -ss56b t j = 25 c f = 1 mhz i n s t a n t a n e o u s r e v e r s e c u r r e n t ( m a ) percent of rated peak reverse voltage,(%) fig.5-typical rever characteristics 40 60 80 100 120 140 20 0.01 0.1 20 1.0 0.001 0 10 t j =75 t j =100 t j =25
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